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Synthesis and investigation of nanocrystalline SiC properties in sensor applications

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3 Author(s)
O. A. Agueev ; Taganrog State Univ. of Radio Eng., Rostov-on-Don, Russia ; N. N. Moskovchenko ; L. A. Svetlichnaya

In this work, thermodynamical rules of nanocrystalline SiC synthesis by solid state reactions are considered. Synthesis of SiC is likely at a temperature of more than 750 K under pressure of 10-6 Torr. Experimental research of electro-physical properties of nanocrystalline SiC samples is reported. The resistances of SiC samples are 48.5 MΩ and 4.95 MΩ and the thermal resistance coefficients are 3.58×10-4 K-1 and -3.89×10-3 K-1 depending on the fabrication regimes. It is shown that nanocrystalline SiC is a promising material for manufacturing chemical sensors.

Published in:

Advanced Semiconductor Devices and Microsystems, 2002. The Fourth International Conference on

Date of Conference:

14-16 Oct. 2002