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In this work, thermodynamical rules of nanocrystalline SiC synthesis by solid state reactions are considered. Synthesis of SiC is likely at a temperature of more than 750 K under pressure of 10-6 Torr. Experimental research of electro-physical properties of nanocrystalline SiC samples is reported. The resistances of SiC samples are 48.5 MΩ and 4.95 MΩ and the thermal resistance coefficients are 3.58×10-4 K-1 and -3.89×10-3 K-1 depending on the fabrication regimes. It is shown that nanocrystalline SiC is a promising material for manufacturing chemical sensors.
Date of Conference: 14-16 Oct. 2002