System Maintenance:
There may be intermittent impact on performance while updates are in progress. We apologize for the inconvenience.
By Topic

Switching effects in magnetic semiconductors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Lugscheider, W. ; Forschungslaboratorein der Siemens AG, Munich, Germany ; Zinn, W.

Single crystals of CdCr2Se4undergo a transition ("switching") from a low conductivity to a high conductivity state at a certain threshold electric field strength, as in Si-doped YIG. The appearing IV characteristics are similar to those of amorphous semiconductors. However, for the crystalline ferri-and ferromagnetic materials this switching is induced by well-defined transitions of electrons from narrow d and for p bands and/or doping levels into an initially unfilled broad conduction band by means of field ionization. In CdCr2Se4this is concluded from the characteristic temperature and magnetic field dependence of all critical electric values for the switching and instabilities which are causing negative resistance slopes. With an electrical field strength kept close to the critical value for switching, pure and doped magnetic semiconducting crystals could be switched to the high conductivity state by an applied magnetic field of less than 1 Vs/m2.

Published in:

Magnetics, IEEE Transactions on  (Volume:8 ,  Issue: 3 )