Referenced Items are not available for this document.
Charge injection in MOS analog switches, also called pass transistors or transmission gates, is approached by using the continuity equation. Experimental results show the negligible influence of substrate current which leads to a unidimensional model. An easy-to-handle simplified model is deduced and its predictions compared to the injection obtained by measurements. It is shown that this model, which can be used to implement various strategies to reduce charge injection, is valid in any realistic situation.
Published in:
Solid-State Circuits, IEEE Journal of
(Volume:22
,
Issue:
6
)
Date of Publication: Dec 1987
- Page(s):
- 1091 - 1097
- ISSN :
- 0018-9200
- Digital Object Identifier :
- 10.1109/JSSC.1987.1052859
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 January 2003
- Issue Date :
- Dec 1987
- Sponsored by :
- IEEE Solid-State Circuits Society
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