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Stochastic geometry effects in MOS transistor

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1 Author(s)

The influence of random edge effects and oxide thickness variations on MOS transistor characteristics is investigated. The variance of the drain current is calculated as a function of the parameters of the stochastic geometry effects. Finally, the relation with the scaling down of the transistor dimensions is also included.

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Solid-State Circuits, IEEE Journal of  (Volume:20 ,  Issue: 4 )