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I/sup 2/L design in standard bipolar process

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1 Author(s)

A calculation method for I/SUP 2/L gain parameters as a function of the design is presented. The small current gain of I/SUP 2/L inverters in a standard bipolar process is improved by inserting the shallow n/SUP +/-diffusion into the p-n-p base, thus providing for correct operation of four-collector devices. DC and AC characteristics are discussed.

Published in:

IEEE Journal of Solid-State Circuits  (Volume:13 ,  Issue: 6 )