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An Mo Gate 4K Static MOS RAM

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7 Author(s)

Performance of a 4K static MOS RAM was improved significantly with utilization of low-resistance molybdenum-gate process instead of conventional polysilicon-gate process. A typical access time of 27 ns was achieved with a low power consumption of 250 mW when the RAM was operated at supply voltage of 5 V and TTL-compatible I/O levels. Signal propagation delay along the word line of the RAM was quite small as a result of the reduction in interconnection resistance. Several disadvantages of the Mo gate process were overcome by improving fabrication technologies.

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:15 ,  Issue: 4 )

Date of Publication:

Aug. 1980

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