Referenced Items are not available for this document.
A large-signal model is derived for the substrate fed integrated injection logic (I/SUP 2/L) gate which is suitable for computer-aided circuit design and the optimization of the physical structure. Since the analysis extends the Ebers-Moll model it differs from the existing models in that the effects of high-level injection and injector debiasing are included. Furthermore, heavy doping effects are included in the calculation of currents and minority carrier storage. The analysis of the oxide isolated structure predicts circuit delays of less than 5 ns at 50 /spl mu/A.
Published in:
Solid-State Circuits, IEEE Journal of
(Volume:13
,
Issue:
4
)
Date of Publication: Aug. 1978
- Page(s):
- 491 - 499
- ISSN :
- 0018-9200
- Digital Object Identifier :
- 10.1109/JSSC.1978.1051083
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 January 2003
- Issue Date :
- Aug. 1978
- Sponsored by :
- IEEE Solid-State Circuits Society
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