Referenced Items are not available for this document.
Excess fixed charge and surface states in various MIS structures have been successfully removed by the RF annealing technique. Important processing parameters that are pertinent to a successful anneal have been defined. A qualitative model is proposed to describe the annealing mechanisms, and to account for the experimental results. It is thought to be a cooperative effect involving the RF field, the plasma radiation, and the induced wafer temperature.
Published in:
Solid-State Circuits, IEEE Journal of
(Volume:13
,
Issue:
4
)
Date of Publication: Aug 1978
- Page(s):
- 445 - 454
- ISSN :
- 0018-9200
- Digital Object Identifier :
- 10.1109/JSSC.1978.1051075
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 January 2003
- Issue Date :
- Aug 1978
- Sponsored by :
- IEEE Solid-State Circuits Society
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