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Effects of RF annealing on the excess charge centers in MIS dielectrics

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1 Author(s)

Excess fixed charge and surface states in various MIS structures have been successfully removed by the RF annealing technique. Important processing parameters that are pertinent to a successful anneal have been defined. A qualitative model is proposed to describe the annealing mechanisms, and to account for the experimental results. It is thought to be a cooperative effect involving the RF field, the plasma radiation, and the induced wafer temperature.

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:13 ,  Issue: 4 )