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Linear compatible I/SUP 2/L technology with high voltage transistors

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1 Author(s)

A technology is proposed in which it is possible to realize both I/SUP 2/L circuits and linear transistors with V/SUB CBO/ of 60 V. The essential step in such a technology is an additional n/SUP +/-flat diffusion. The technological parameters are derived. From measurements on wafers processed in the outlined technology. The author established functioning I/SUP 2/L elements and high voltage transistors.

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Solid-State Circuits, IEEE Journal of  (Volume:12 ,  Issue: 5 )