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Double boosting pump, hybrid current sense amplifier, and binary weighted temperature sensor adjustment schemes for 1.8V 128Mb mobile DRAMs

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11 Author(s)
Jae-Yoon Sim ; Memory Product & Technol. Div., Samsung Electron., Kyunggi, South Korea ; Hongil Yoon ; Ki-Chul Chun ; Hyun-Seok Lee
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A 1.8V 128Mb SDRAM is implemented for low current mobile applications with a 0.15/spl mu/m technology. The double boosting pump and hybrid current sense amplifier schemes are optimized for the low voltage regime with high pumping efficiency and stable I-to-V gain, respectively. A temperature sensor together with the binary weighted adjustment technique allow a very accurate implementation without loss in productivity.

Published in:

VLSI Circuits Digest of Technical Papers, 2002. Symposium on

Date of Conference:

13-15 June 2002