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A 1.8-V operation RFCMOS transceiver for Bluetooth

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11 Author(s)
Komurasaki, H. ; Mitsubishi Electr. Corp., Hyogo, Japan ; Heima, T. ; Miwa, T. ; Yamamoto, K.
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This paper describes a single-chip Bluetooth transceiver LSI, which uses a standard 0.18 /spl mu/m bulk CMOS process. It can operate at a supply voltage of 1.8 V, and includes even a low loss transmit/receive antenna switch (SW) in order to realize high level integration. For lower chip area, a channel selection filter consists of simple linearized source-coupled pairs, and the transceiver occupies 10.2 mm/sup 2/.

Published in:

VLSI Circuits Digest of Technical Papers, 2002. Symposium on

Date of Conference:

13-15 June 2002