Referenced Items are not available for this document.
The state-of-the-art noise figures of 2.17 dB and 3.0 dB at 5 GHz band from monolithic CMOS LNA's with 10 mW dissipation on thin (∼ 20 μm) and normal (750 μm) substrates are presented. Excellent Input return loss (S11) of -45 dB, high P1dB of -8.3 dBm and large IIP3 of 0.3 dBm were also obtained. The excellent performance of the LNA's is attributed to the methodology we developed.
Published in:
VLSI Circuits Digest of Technical Papers, 2002. Symposium on
Date of Conference: 2002
- Page(s):
- 226 - 229
- Print ISBN:
- 0-7803-7310-3
- INSPEC Accession Number:
- 7432227
- Digital Object Identifier :
- 10.1109/VLSIC.2002.1015091
- Product Type:
- Conference Publications
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