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The state-of-the-art noise figures of 2.17 dB and 3.0 dB at 5 GHz band from monolithic CMOS LNA's with 10 mW dissipation on thin (∼ 20 μm) and normal (750 μm) substrates are presented. Excellent Input return loss (S11) of -45 dB, high P1dB of -8.3 dBm and large IIP3 of 0.3 dBm were also obtained. The excellent performance of the LNA's is attributed to the methodology we developed.
Date of Conference: 2002