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Ferroelectric memory based secure dynamically programmable gate array

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6 Author(s)
Masui, S. ; Fujitsu Labs. Ltd., Tokyo, Japan ; Ninomiya, T. ; Oura, M. ; Yokozeki, W.
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A nonvolatile ferroelectric SRAM based 8-context dynamically programmable gate array enables low-cost field programmable systems by the elimination of off-chip nonvolatile memories. Read and program procedures of the associated configuration memory are securely protected, so that unauthorized users cannot gain access to configuration data. The ferroelectric SRAM configuration memory features 2ns nondestructive read operations along with stable data recall. The logic block circuit is optimized to improve available logic gates for multi-context scheme.

Published in:

VLSI Circuits Digest of Technical Papers, 2002. Symposium on

Date of Conference:

13-15 June 2002

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