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Low threshold efficient Sb-based type-I quantum-well VCSEL emitting in the λ = 2-2.5 μm range

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6 Author(s)
Cerutti, L. ; CEM2, Univ. Montpellier 2, France ; Garnache, A. ; Genty, F. ; Alibert, C.
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Here we demonstrate a low-threshold efficient type-I quantum-well GaSb-based vertical-cavity-surface-emitting-laser (VCSEL) operating near 2.2 μm in the continuous-wave (CW) regime up to ∼220 K, with a low divergence circular beam. The structure is optically-pumped by a commercial 830 nm diode laser.

Published in:

Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th

Date of Conference:

2002