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Large blue shift in GaInAsP/InP vertically-stacked multiple-quantum-wire lasers by dry etching and regrowth processes

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6 Author(s)
Yagi, Hideki ; Res. Center for Quantum Effect Electron., Tokyo Inst. of Technol., Japan ; Muranushi, K. ; Nunoya, N. ; Sano, Takuya
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GaInAsP/InP partially strain-compensated multiple-quantum-wire lasers with the wire widths of 18 nm and 27 nm in the period of 80 nm were fabricated by electron beam lithography, CH4/H2-reactive ion etching and organometallic vapor-phase-epitaxial regrowth. Size distributions of these quantum-wire structures were measured by scanning electron microscope and the standard deviation was obtained to be less than ± 2 nm. From EL spectra of various wire widths lasers, a larger energy blue shift than that from a simple analysis model was observed, which can be attributed to residual compressive strain between the active region and surrounding InP layer.

Published in:

Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th

Date of Conference:

2002