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Highly ordered array of quantum stripes are obtained on In-terminated InAs(001) reconstructed surface. We report the investigation of clean In-terminated InAs(OO1)(4x2)-c(8x2), and InAs(001)-(4x4) surfaces by low electron energy diffraction (LEED) and by high-resolution angle-resolved photoemission spectroscopy (ARPES). Monitoring the InAs(001) surface by LEED as a function of the substrate temperature, the -(4x4) and the -4x2(8x2) reconstructions were observed. ARPES measurements on both reconstructions show electronic states belonging to the In-stripes, which appear on the surface after the annealing treatment. These states are non-dispersive as a function of photon energy and in the case of 4x2-c(8x2) reconstruction the k-dispersion exists only along the  stripes direction, at variance on c(4x4s) surface the states have a fix energy.