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InAs self-assembled quantum dot lasers grown on [100] InP

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7 Author(s)
Poole, P.J. ; Inst. for Microstructural Sci., Nat. Res. Council of Canada, Ottawa, Ont., Canada ; Allen, C.Ni. ; Marshall, P. ; Fraser, J.
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Quantum dot lasers containing five stacked layers of InAs quantum dots (QDs) embedded in quaternary InGaAsP are grown on [100] InP substrates. The QD ensemble has a density of 1.5 × 1010 cm-2 and emits light at ∼1.6 μm at 77 K. Lasing wavelength and threshold current density can be shifted by changing the cavity length of the laser diode and the latter reaches a value as low as 49 A/cm2 at 77 K for a gate size of 2000 μm × 150 μm. Temperature dependence of the threshold current is observed implying the presence of thermionic emission increasing with temperature.

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Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th

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