By Topic

Low size dispersion of inas quantum islands emitting at 1.55/spl mu/m on InP [001]

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

10 Author(s)
C. Monat ; LEOM, Ecole Centrale de Lyon, Ecully, France ; M. Gendry ; J. Brault ; M. P. Besland
more authors

We show that the size dispersion of InAs/InP(00l) quantum islands emitting at 1.S5μm can be reduced through the optimization of SSMBE growth parameters. In optimized growth conditions, i.e. high Tc ~520°C and low PAs = 2 10-6 torr leading to a 2D/3D growth mode transition measured by WEED at 1.8 ML, photoluminescence spectra with a FWHMs as low as 68meV at 300K have been obtained for a 4ML InSa deposit. Photoluminescence measurements as a function of the excitation power show that the multi-component PL spectra can be understood in terms of fundamental and excited levels of InAs islands. The fundamental peak (FWHM equal to 22meV at 8K) reveals a very low island size dispersion. Plane-view TEM and AFM images show that InAs islands are quantum << sticks >> aligned along [1-10], with flat top surfaces. Cross-section TEM imaging shows a very weak height dispersion attributed to the ability of the InAs/InP(00l) system to allow island height variation by monolayer fluctuation.

Published in:

Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th

Date of Conference:

16-16 May 2002