By Topic

Influence of Si-donor doping on the exciton localization in modulation-doped GaN/Al0.07Ga0.93N multiple quantum well

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Haratizadeh, H. ; Dept. of Phys. & Meas. Technol., Linkoping Univ. ; Paskov, P.P. ; Pozina, G. ; Holtz, P.O.
more authors

We have studied the effects of Si doping on the recombination dynamics and exciton localization in modulation-doped GaN/Al0.07Ga0.93N multiple-quantum-well structures by means of photoluminescence (PL) and time-resolved PL measurements. The PL peak position shows a blue shift as the Si doping in the barriers is increased (up to 4.2×1019 cm-3). For even higher doping levels a red shift of the PL emission is observed. The decay time of an undoped sample shows nonexponential behavior, while the Si doped samples show mono-exponential behavior. Surprisingly, the PL decay time at 2 K is found to be nearly constant for all doping levels, in these samples.

Published in:

Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th

Date of Conference:

2002