By Topic

Reliability of InP-based avalanche photodiodes for high bit-rate fiber-optic communication systems

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Smetona, S. ; Nortel Networks Opt. Components, Ottawa, Ont., Canada ; Klunder, K. ; An, S. ; Rousina-Webb, R.
more authors

We report on a study of the impact of mechanical stress on the electrical properties of InP-based avalanche photodiodes used in OC48 and OC192 10 Gb/s fiber-optic communication applications. The device structure under study consists of separate absorption, grading, charge and multiplication regions. A large population of devices, which were die bonded onto carriers using a range of epoxy and eutectic solder adhesives, has been subjected to accelerated life testing for >5000 h under high thermal and electrical overstress conditions. In addition, we have performed an analysis of the response of the current-voltage characteristics of the device to an external mechanical stress. The mechanical stress experiments give insight into variations in device performance that may arise if the die bonding process is not performed properly. Relaxation in device strain, due to thermally induced epoxy bond degradation, is shown to be a potential hazard, which can interfere with reliability assessment of the device. When these factors are controlled, the device lifetime exhibits the expected log-normal distribution, characterized by an exceptionally low wearout FIT rate.

Published in:

Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th

Date of Conference:

2002