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We summarize our experimental results on MOVPE-based etching of InP and related (InGa)(AsP) materials using tertiarybutylchloride (TBCl) as precursor. The impact of various process parameters on etch rate and surface morphology is outlined, as well as the crystallographic etching behaviour. Two applications of TBCl etching are presented, namely substrate cleaning for eliminating detrimental substrate interface layers and the growth of BH laser structures involving in-situ etching for the formation of the laser ridge. Finally, epitaxy based in-situ etching is discussed from the device fabrication point of view.