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Morphological instability of GaInNAs quantum wells on AlGaAs/GaAs distributed Bragg reflectors grown by metal-organic vapor-phase epitaxy

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4 Author(s)
Sundgren, P. ; Dept. of Microelectron. & Inf. Technol., R. Inst. of Technol., Kista, Sweden ; Asplund, C. ; Baskae, K. ; Hammar, M.

We report on the optical and structural integrity of metal-organic vapor-phase epitaxy grown GaInNAs/GaAs single quantum wells on AlGaAs/GaAs distributed Bragg reflectors (DBRs). Surface morphology as measured by atomic force microscopy and quantum well photoluminescence spectra were investigated for different numbers of DBR periods and different DBR-growth temperatures. Increased number of DBR periods severely degrades the surface morphology and photoluminescence. However, a significant improvement was obtained by lowering the growth temperature of the DBRs from 745 to 680°C.

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Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th

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