By Topic

Morphological instability of GaInNAs quantum wells on AlGaAs/GaAs distributed Bragg reflectors grown by metal-organic vapor-phase epitaxy

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Sundgren, P. ; Dept. of Microelectron. & Inf. Technol., R. Inst. of Technol., Kista, Sweden ; Asplund, C. ; Baskae, K. ; Hammar, M.

We report on the optical and structural integrity of metal-organic vapor-phase epitaxy grown GaInNAs/GaAs single quantum wells on AlGaAs/GaAs distributed Bragg reflectors (DBRs). Surface morphology as measured by atomic force microscopy and quantum well photoluminescence spectra were investigated for different numbers of DBR periods and different DBR-growth temperatures. Increased number of DBR periods severely degrades the surface morphology and photoluminescence. However, a significant improvement was obtained by lowering the growth temperature of the DBRs from 745 to 680°C.

Published in:

Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th

Date of Conference:

2002