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Quality improvement of oxidized-GaAs/n-GaAs structure by nitrogen plasma treatment

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8 Author(s)
Paul, N.C. ; Graduate Sch. of Natural Sci. & Technol., Kanazawa Univ., Japan ; Ohta, Y. ; Tezuka, D. ; Nasuno, M.
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A low surface/interface state density and a high quality nm-thickness insulating layer is necessary for an ultra-high-speed metal/insulator/semiconductor (MIS) type compound semiconductor device. However, such an ultra-thin insulator with good interface quality is not available yet. The authors reported that direct oxidation of a GaAs surface by UV and ozone can form a controlled nm-thin insulating layer and it suppresses leakage current, although the process deteriorates the IS interface characteristics. They also demonstrated performances and problems of GaAs MISFETs which have nm-thin oxidized-GaAs as the insulating layer. Hara et al. (1999) reported improved C-V characteristics of a nitrogen plasma treated oxidized GaAs surface. The authors investigated effects of nitrogen plasma treatment upon oxidized and non oxidized (100) n-GaAs wafers, and confirmed improved quality of the oxidized wafers by the nitrogen plasma treatment

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Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th

Date of Conference:

2002