By Topic

Quality improvement of oxidized-GaAs/n-GaAs structure by nitrogen plasma treatment

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Paul, N.C. ; Graduate Sch. of Natural Sci. & Technol., Kanazawa Univ., Japan ; Ohta, Y. ; Tezuka, D. ; Nasuno, M.
more authors

A low surface/interface state density and a high quality nm-thickness insulating layer is necessary for an ultra-high-speed metal/insulator/semiconductor (MIS) type compound semiconductor device. However, such an ultra-thin insulator with good interface quality is not available yet. The authors reported that direct oxidation of a GaAs surface by UV and ozone can form a controlled nm-thin insulating layer and it suppresses leakage current, although the process deteriorates the IS interface characteristics. They also demonstrated performances and problems of GaAs MISFETs which have nm-thin oxidized-GaAs as the insulating layer. Hara et al. (1999) reported improved C-V characteristics of a nitrogen plasma treated oxidized GaAs surface. The authors investigated effects of nitrogen plasma treatment upon oxidized and non oxidized (100) n-GaAs wafers, and confirmed improved quality of the oxidized wafers by the nitrogen plasma treatment

Published in:

Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th

Date of Conference: