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Influence of phosphorus on undoped and zinc doped InGaAs

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6 Author(s)
L. B. Karlina ; A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia ; B. Ya. Ber ; P. A. Blagnov ; A. M. Boiko
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Simultaneous diffusion of P and Zn in In0.53Ga0.47As using Sn-InP-Zn as a dopant source is investigated. The dependence of the diffusion profiles Zn and P on diffusion time at 600°C is presented. Typical zinc concentration and depths obtained are 10*19 cm-3 and 0.5-1.3 μm. The incorporation of P into InGaAs at almost constant concentration for layers of 3-μm thickness was detected. The effects of the exposure of InGaAs to 1 MeV electron fluence 1015, 1016 cm-2 were investigated by photoluminescence and Raman scattering. Results presented here show a slight increase in PL emission after irradiation InGaAs (Zn, P) by fluence of 1015 cm-2. The free carrier concentration remains at the same level before and after irradiation.

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Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th

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