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High-performance 1.2-μm highly strained InGaAs/GaAs quantum well lasers

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8 Author(s)
Mogg, S. ; Dept. of Microelectron. & Inf. Technol., R. Inst. of Technol., Kista, Sweden ; Plaine, G. ; Asplund, C. ; Sundgren, P.
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The growth and characterisation of high-performance 1.2-μm highly strained InGaAs/GaAs single quantum well (SQW) laser diodes is reported. High output power in excess of 200 mW per facet was obtained from ridge-waveguide (RWG) lasers at an emission wavelength of 1230 nm. These lasers operate CW to at least 145°C and show a high characteristic temperature of 150 K. The net modal gain was measured using the method described by Hakki and Paoli (1975).

Published in:

Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th

Date of Conference:

2002