High-performance 1.2-/spl mu/m highly strained InGaAs/GaAs quantum well lasers

The growth and characterisation of high-performance 1.2-/spl mu/m highly strained InGaAs/GaAs single quantum well (SQW) laser diodes is reported. High output power in excess of 200 mW per facet was obtained from ridge-waveguide (RWG) lasers at an emission wavelength of 1230 nm. These lasers operate CW to at least 145/spl deg/C and show a high characteristic temperature of 150 K. The net modal gain was measured using the method described by Hakki and Paoli (1975).