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1.3 μm BH-FP laser with integrated monitor photodiode, 45° reflector for bottom side emission employing full on-wafer fabrication

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7 Author(s)
Janiak, K. ; Heinrich-Hertz-Inst. fur Nachrichtentech. Berlin GmbH, Germany ; Albrecht, P. ; Fidorra, S. ; Heidrich, H.
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We report on a 1.3 μm FP-BH laser with monolithically integrated monitor photodiode and 45° reflector for bottom side emission of the laser light. The devices are fabricated by employing a full on-wafer process including the formation of laser facets and the deposition of the high/antireflective coatings. Besides the possibility of on-wafer characterization, this device with its bottom side optical emission opens the way for the fabrication of low-cost optoelectronic modules based on semiconductor SMT-package technique.

Published in:

Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th

Date of Conference:

2002