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In this paper, a Ku-band low-noise MMIC amplifier is presented, which is equipped with a bias circuit that compensates not only temperature dependence of the FETs' gain but also gain variation between chips due to process variations. The Ku-band low noise MMIC amplifier with proposed gate-bias circuit was designed and manufactured. It was proved that the proposed bias circuit reduced the temperature dependence of the two-stage MMIC amplifier's gain from 1.4 dB/100 K to 1.0 dB/100 K. The chip area consumed for the bias circuit is less than 10% of the total chip size of 1.17 mm/sup 2/. The gain variation between chips was reduced to 0.25 dB in RMS. This amplifier is suitable for active phased array applications.
Microwave Symposium Digest, 2002 IEEE MTT-S International (Volume:3 )
Date of Conference: 2-7 June 2002