By Topic

Epi resistivity profiles without wafer damage

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
K. Woolford ; SUMCO Phoenix Corp., Fremont, CA, USA ; C. Panczyk ; G. Martel

Non-contact methods are now available to measure the resistivity of silicon epitaxy. The new technology offers wafer manufacturers the opportunity to significantly lower operating costs and increase reactor capacity by eliminating the need for monitor wafers. Our group investigated the Epimet Model 2 (SemiTest, Inc.) for monitoring epi wafer production. Our evaluation shows suitable measurement repeatability, reproducibility, and stability for the epi parts tested. Further, the Epimet significantly outperforms the Hg-probe CV in head-to-head measurement capability comparison. This paper focuses on the product-wafer integrity tests performed which demonstrated that the Epimet is indeed non-contaminating and non-damaging to wafers, allowing it to be used to monitor actual product wafers.

Published in:

Advanced Semiconductor Manufacturing 2002 IEEE/SEMI Conference and Workshop

Date of Conference:

2002