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BF2+ implant: a fluorine bubble induced ET failure

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5 Author(s)
Viera, C.J. ; Nat. Semicond. Corp., South Portland, ME, USA ; Gurcan, B. ; Crocker, K.A. ; Todd, P.A.
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Fluorine bubbles are a known result of BF2+ high energy implants. This work presents a failure mechanism induced by gross fluorine bubbles, that allows poly silicon to be damaged during its subsequent cobalt silicide etch. An alternative implant that includes both BF2+ and B11 may alleviate the effects of F precipitates without eliminating the benefits of BF2+ self-amorphizing the substrate.

Published in:

Advanced Semiconductor Manufacturing 2002 IEEE/SEMI Conference and Workshop

Date of Conference:

2002