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BF2+ implant: a fluorine bubble induced ET failure

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5 Author(s)
C. J. Viera ; Nat. Semicond. Corp., South Portland, ME, USA ; B. Gurcan ; K. A. Crocker ; P. A. Todd
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Fluorine bubbles are a known result of BF2+ high energy implants. This work presents a failure mechanism induced by gross fluorine bubbles, that allows poly silicon to be damaged during its subsequent cobalt silicide etch. An alternative implant that includes both BF2+ and B11 may alleviate the effects of F precipitates without eliminating the benefits of BF2+ self-amorphizing the substrate.

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Advanced Semiconductor Manufacturing 2002 IEEE/SEMI Conference and Workshop

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