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Alternative Smart-cut-like process for ultra-thin SOI fabrication

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4 Author(s)
Usenko, A. ; Silicon Wafer Technol., Newark, NJ, USA ; Carr, W.N. ; Bo Chen ; Chabal, Y.

We describe for the first time a layer transfer caused by delamination along the hydrogen platelet layer formed by RF plasma hydrogenation at a place of end-of-range defects. The process involves first creating a buried trap layer using variously silicon, or argon implantation. Wafers thus processed with an initial implant to levels below 1016 cm-2 are then hydrogenated with RF plasma. Next steps include pre-bonding, cleavage, and post-bonding as in the Smart-cut process. The cleavage occurs at a depth corresponding to the maximum of vacancy-enriched defects (between Rp/2 and Rp). Plasma hydrogenation may be used as a step in the process of fabricating thin SOI wafers.

Published in:

Advanced Semiconductor Manufacturing 2002 IEEE/SEMI Conference and Workshop

Date of Conference:

2002