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We describe for the first time a layer transfer caused by delamination along the hydrogen platelet layer formed by RF plasma hydrogenation at a place of end-of-range defects. The process involves first creating a buried trap layer using variously silicon, or argon implantation. Wafers thus processed with an initial implant to levels below 1016 cm-2 are then hydrogenated with RF plasma. Next steps include pre-bonding, cleavage, and post-bonding as in the Smart-cut process. The cleavage occurs at a depth corresponding to the maximum of vacancy-enriched defects (between Rp/2 and Rp). Plasma hydrogenation may be used as a step in the process of fabricating thin SOI wafers.