Cart (Loading....) | Create Account
Close category search window
 

Manufacturability of single and double-gate ultrathin silicon film fully depleted SOI technologies

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Krivokapic, Z. ; Adv. Micro Devices (AMD), Santa Clara, CA, USA ; Heavlin, William D.

Of several possible devices that can be used for sub-70 nm node technologies, two are built on ultra thin SOI layers. Scaling of such thin silicon layer SOI devices is constrained by the severe short channel control problem. To alleviate this, double-gate structures have been proposed by Wong et al. (1999), Chang et al. (2000), and Ieong et al. (2000). In this paper, we assess the manufacturability of single-gate (SG) and symmetric double-gate (DG) devices for gate lengths between 15 and 70 nm. Our results show that SG devices are not only manufacturable but also have tighter distributions than DG devices; inverter ring oscillator (RO) stage delays and power consumption are also better for SG devices. Besides gate length we find two additional major sources of variation: silicon thickness and encapsulation width. We show that for an optimized double-gate device with minimized parasitic resistance, CD variations become a dominant factor at 20-nm gate lengths despite superior electrostatic integrity. Also, the work function of metal gates must be controlled to better than ±0.1 eV (3σ) to avoid severe manufacturability problems

Published in:

Semiconductor Manufacturing, IEEE Transactions on  (Volume:15 ,  Issue: 2 )

Date of Publication:

May 2002

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.