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Deep ultraviolet light-emitting diodes using quaternary AlInGaN multiple quantum wells

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7 Author(s)
Shatalov, M. ; Dept. of Electr. Eng., South Carolina Univ., Columbia, SC, USA ; Zhang, J. ; Chitnis, A.S. ; Adivarahan, V.
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We report on the growth, fabrication, and characterization of deep ultraviolet (UV) light-emitting diodes (LEDs) with quaternary AlInGaN-AlInGaN multiple quantum wells (MQWs) in the active region. These high quality quaternary MQWs were deposited over sapphire and n-SiC substrates using a novel pulsed atomic layer epitaxy (PALE) technique. LEDs with peak emission wavelengths from 305-340 nm were fabricated and characterized. Using square geometry devices over sapphire and n-SiC substrates we studied the role of current crowding. Numerical simulation results are also provided to explain the observed current-voltage and light-emission characteristics

Published in:

Selected Topics in Quantum Electronics, IEEE Journal of  (Volume:8 ,  Issue: 2 )

Date of Publication:

Mar/Apr 2002

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