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A high-performance five-channel NMOSFET using selective epitaxial growth and lateral solid phase epitaxy

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3 Author(s)
Kumar, M. ; Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China ; Liu, Haitao ; Sin, J.K.O.

In this letter, a novel five-channel NMOSFET (FC-NMOS) using selective epitaxial growth (SEG) and lateral solid phase epitaxy (LSPE) is reported. The FC-NMOS is an integration of a conventional bulk NMOS, two vertical NMOS, and a gate-all-around NMOS. The top silicon layer for implementing the gate-all-around structure is obtained by using the LSPE with the SEG pillar as the silicon seed. The FC-NMOS has a 3.6/spl times/ higher current drive as compared to the conventional bulk NMOS. This makes the FC-NMOS very promising for VLSI/ULSI applications.

Published in:

Electron Device Letters, IEEE  (Volume:23 ,  Issue: 5 )