Referenced Items are not available for this document.
A new planarized trench isolation technique for GaAs devices fabrication by a liquid phase chemical-enhanced oxidation (LPCEO) method is proposed. The LPCEO-trench-isolation technique can be operated at low temperature with a simple and low-cost process. As compared with conventional mesa isolation, the LPCEO-trench-isolation can provide better planarity and isolation properties. Finally, GaAs MOSFETs fabricated with LPCEO-trench-isolation and selective oxidized gate both by the LPCEO method are demonstrated.
Published in:
Electron Device Letters, IEEE
(Volume:23
,
Issue:
5
)
Date of Publication: May 2002
- Page(s):
- 237 - 239
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 7257884
- Digital Object Identifier :
- 10.1109/55.998862
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 07 August 2002
- Issue Date :
- May 2002
- Sponsored by :
- IEEE Electron Devices Society
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