Cart (Loading....) | Create Account
Close category search window

CMOS-compatible planar silicon waveguide-grating-coupler photodetectors fabricated on silicon-on-insulator (SOI) substrates

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Csutak, S.M. ; Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA ; Dakshina-Murthy, S. ; Campbell, Joe C.

We report planar silicon interdigitated p-i-n photodiodes with waveguide-grating couplers fabricated on silicon-on-insulator (SOI) substrates. The devices were fabricated in standard CMOS technology on 200-nm-thick SOI wafers with no additional fabrication steps. A waveguide-grating coupler with a period of 265 nm increased the quantum efficiency by a factor of four compared to a photodiode without a coupler. The dark current was 10 pA at -3-V bias and the bandwidth was 4.1 GHz (RC limited)

Published in:

Quantum Electronics, IEEE Journal of  (Volume:38 ,  Issue: 5 )

Date of Publication:

May 2002

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.