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CMOS-compatible planar silicon waveguide-grating-coupler photodetectors fabricated on silicon-on-insulator (SOI) substrates

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3 Author(s)
S. M. Csutak ; Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA ; S. Dakshina-Murthy ; J. C. Campbell

We report planar silicon interdigitated p-i-n photodiodes with waveguide-grating couplers fabricated on silicon-on-insulator (SOI) substrates. The devices were fabricated in standard CMOS technology on 200-nm-thick SOI wafers with no additional fabrication steps. A waveguide-grating coupler with a period of 265 nm increased the quantum efficiency by a factor of four compared to a photodiode without a coupler. The dark current was 10 pA at -3-V bias and the bandwidth was 4.1 GHz (RC limited)

Published in:

IEEE Journal of Quantum Electronics  (Volume:38 ,  Issue: 5 )