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Modeling of the CoolMOSTM transistor. II. DC model and parameter extraction

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3 Author(s)
Daniel, B.J. ; Dept. of Electr. Eng., Indian Inst. of Technol., Mumbai, India ; Parikh, C.D. ; Patil, M.B.

An accurate dc model for the CoolMOSTM power transistor is presented. An elementary model consisting of an intrinsic MOSFET and a JFET to represent the drift region, is first discussed and it is pointed out that this is a rather poor model, needing improvements. Using device simulation results, it is shown that, by replacing the gate and drain voltages of the intrinsic MOSFET by appropriate "effective" voltages, a highly accurate model is obtained. A systematic procedure for parameter extraction is described and an implementation of the new model in the form of a SPICE subcircuit is given

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Electron Devices, IEEE Transactions on  (Volume:49 ,  Issue: 5 )