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The correlation resistance for low-frequency noise compact modeling of Si/SiGe HBTs

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9 Author(s)
Borgarino, M. ; Dipt. di Ingegneria dell''Informazione, Modena Univ., Italy ; Bary, L. ; Vescovi, D. ; Menozzi, R.
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The measurement of the correlation between the noise generators is a mandatory issue for the low-frequency noise modeling of bipolar transistors, and it is recognized as a very hard experimental task. In the present work, we introduce the concept of correlation resistance and we demonstrate that it can be usefully employed as a guideline for the low-frequency noise modeling in terms of intrinsic noise sources. As a proof of concept, the investigation technique is applied to submicron, BiCMOS-compatible Si/SiGe heterojunction bipolar transistors. It is pointed out that a satisfactory description of the transistor low-frequency noise behavior can be obtained by taking into account noise sources associated with surface recombination/fluctuation in the extrinsic base region

Published in:

Electron Devices, IEEE Transactions on  (Volume:49 ,  Issue: 5 )

Date of Publication:

May 2002

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