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Models for subthreshold and above-threshold currents in 0.1-μm pocket n-MOSFETs for low-voltage applications

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2 Author(s)
Yon-Sup Pang ; Dept. of Electr. & Comput. Eng., Arizona Univ., Tucson, AZ, USA ; Brews, J.R.

We present a model for subthreshold current in deep-submicrometer pocket n-MOSFETs based on the diffusion current transport equation, the quasi-two-dimensional (2-D) Poisson equation and a doping-density-dependent mobility model, and a model for above-threshold current in deep-submicrometer pocket n-MOSFETs based on the drift-diffusion current transport equation for nonuniformly doped MOSFETs, the charge-sheet approximation, a solution of the one-dimensional (1-D) Poisson equation, a quasi-2-D model for the velocity saturation region, longitudinal- and transverse-field-dependent mobility models. The analytic models for subthreshold and above-threshold currents are used to efficiently construct viable design spaces locating well-designed 0.1-μm pocket n-MOSFETs that meet all the device design specifications of off-state (leakage) current, on-state (drive) current, and power-supply voltage. The model for subthreshold current correctly predicts an increase in off-state current in sub-100 nm pocket n-MOSFETs. The model for above-threshold current generates ID-VDS characteristics of a variety of deep-submicrometer pocket n-MOSFETs

Published in:

Electron Devices, IEEE Transactions on  (Volume:49 ,  Issue: 5 )

Date of Publication:

May 2002

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