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High-quality polycrystalline Si TFTs fabricated on stainless-steel foils by using sputtered Si films

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2 Author(s)
T. Serikawa ; Cyberspace Labs., NTT Corp., Tokyo, Japan ; F. Omata

We have developed a low-temperature fabrication process (⩽ 200°C for high-quality polycrystalline Si thin-film transistors (poly-Si TFTs) on flexible stainless-steel foils. The fabrication processes is realized through sputter deposition of thin films, including active-Si and gate-SiO2 films, crystallization of Si films by KrF excimer laser irradiation, and inductively coupled plasma hydrogenation. High-quality n- and p-channel poly-Si TFTs are successfully fabricated without suffering from problems of substrate bending, film ablation, or cracking in films. The resulting n- and p-channel poly-Si TFTs showed mobilities of 106 and 122 cm2/V·s, respectively. This paper describes the deposition and properties of the sputtered Si films and the fabrication process and electrical characteristics of the poly-SiTFTs

Published in:

IEEE Transactions on Electron Devices  (Volume:49 ,  Issue: 5 )