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High frequency power electronic systems are given by the newest generation of CoolMOS C3 together with SiC-Schottky diode

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1 Author(s)
Lorenz, L. ; Infineon Technol. AG, Munich, Germany

The new CoolMOS C3 generation combines extremely high on-state conductivity with ultra fast switching speed at full pulse current capability. In many applications the outstanding switching performance of the CoolMOS can't be utilized due to the dynamic behaviour of the diode. For this reason a whole family of SiC-diodes have been developed to get the ideal matched pair of switch and ultra fast diodes. The goal of ultra low loss applications in SMPS, power factor correction circuits and motor control units is achieved completely

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Power Conversion Conference, 2002. PCC-Osaka 2002. Proceedings of the  (Volume:1 )

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