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Quasi-optical power-combining arrays

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7 Author(s)
Rutledge, D.B. ; Div. of Eng. & Appl. Sci., California Inst. of Technol., Pasadena, CA, USA ; Popovic, Z.B. ; Weikle, R.M., II ; Kim, M.
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Semiconductor devices have limited power handling capabilities at high frequencies, particularly at millimeter-wave frequencies. A method is presented for overcoming this problem by combining the outputs of several devices quasi-optically in a resonator cavity. This method has been applied to a number of solid-state devices, including Gunn diodes and MESFETs. The devices do not require an external locking signal because they lock to a mode of the resonator cavity. Effective radiated powers of 22 W for a 4*4 array of Gunn diodes and 25 W for a 10*10 array of MESFETs have been achieved.<>

Published in:

Microwave Symposium Digest, 1990., IEEE MTT-S International

Date of Conference:

8-10 May 1990