By Topic

Characterization and modelling of nano-crystals for single electron memory point devices

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Montes, L. ; Lab. de Phys. des Composants A Semiconducteur, ENSERG-INPG, Grenoble, France ; Baron, Thierry ; De Salvo, B. ; Ferraton, S.
more authors

This paper presents some experimental results and a simple model for the study of capacitors containing silicon dots in silicon dioxide to be integrated in a new generation of nonvolatile single electron memories. This work is essential for the stabilisation of the technology to be used in the future for these devices aimed at very high memory arrays.

Published in:

Microelectronics, 2001. ICM 2001 Proceedings. The 13th International Conference on

Date of Conference:

29-31 Oct. 2001