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Analysis of erratic bits in flash memories

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3 Author(s)
Chimenton, A. ; Dipt. di Ingegneria, Ferrara Univ., Italy ; Pellati, P. ; Olivo, P.

This work presents experimental results concerning erratic behaviors in flash memories obtained by tracking the threshold voltage dynamics during any single erase operation and providing a deeper insight into their physical nature. The particular shape of the experimental erase curves allows the derivation of a nearly linear relationship between the amplitude of erratic threshold shifts and the equivalent barrier height controlling Fowler-Nordheim injection

Published in:

Device and Materials Reliability, IEEE Transactions on  (Volume:1 ,  Issue: 4 )

Date of Publication:

Dec 2001

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