By Topic

Effect of a thin ionized-metal-plasma deposited Cu layer on the properties and thermal stability of Cu-TaN-SiO2-Si structures

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Zhang, D.H. ; Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore ; Loh, S.W. ; Li, C.Y. ; Liu, Rong
more authors

Cu-TaN-SiO2-Si structures, fabricated in a three-in-one system, were systematically investigated using various techniques. By depositing a thin plasma-metal-plasma (IMP) Cu layer on the TaN barrier prior to the copper film deposited using metal-organic chemical vapor deposition, the sheet resistance, uniformity, and adhesion of the metal in the Cu-TaN-SiO2-Si structures can be significantly improved. The thermal stability of the structures can also be enhanced due to the reduction of Cu diffusion and out-diffusion of Si, Ta, and O elements. These observations are of great value for application of chemical vapor deposition Cu-IMP Cu in multilevel interconnects of deep-submicron integrated circuits

Published in:

Device and Materials Reliability, IEEE Transactions on  (Volume:1 ,  Issue: 4 )