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Effect of a thin ionized-metal-plasma deposited Cu layer on the properties and thermal stability of Cu-TaN-SiO2-Si structures

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5 Author(s)
D. H. Zhang ; Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore ; S. W. Loh ; C. Y. Li ; Rong Liu
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Cu-TaN-SiO2-Si structures, fabricated in a three-in-one system, were systematically investigated using various techniques. By depositing a thin plasma-metal-plasma (IMP) Cu layer on the TaN barrier prior to the copper film deposited using metal-organic chemical vapor deposition, the sheet resistance, uniformity, and adhesion of the metal in the Cu-TaN-SiO2-Si structures can be significantly improved. The thermal stability of the structures can also be enhanced due to the reduction of Cu diffusion and out-diffusion of Si, Ta, and O elements. These observations are of great value for application of chemical vapor deposition Cu-IMP Cu in multilevel interconnects of deep-submicron integrated circuits

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IEEE Transactions on Device and Materials Reliability  (Volume:1 ,  Issue: 4 )