The authors report an electrically pumped MOVPE-grown VCSEL on GaAs substrate with a GaInNAs active region emitting single mode at 1293 nm with record characteristics. Continuous wave output power at room temperature with 1.4 mW, a threshold current of 1.25 mA and a data transmission rate of 10 Gbit/s has been realised
Published in:
Electronics Letters
(Volume:38
,
Issue:
7
)
Date of Publication: 28 Mar 2002