Close category search window
 

Electrically pumped 10 Gbit/s MOVPE-grown monolithic 1.3 μm VCSEL with GaInNAs active region

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Ramakrishnan, A. ; Infineon Technol. AG, Munich, Germany ; Steinle, G. ; Supper, D. ; Degen, C.
more authors

The authors report an electrically pumped MOVPE-grown VCSEL on GaAs substrate with a GaInNAs active region emitting single mode at 1293 nm with record characteristics. Continuous wave output power at room temperature with 1.4 mW, a threshold current of 1.25 mA and a data transmission rate of 10 Gbit/s has been realised

Published in:
Electronics Letters  (Volume:38 ,  Issue: 7 )

Date of Publication: 28 Mar 2002

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.