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LSI design in the 21st century: key changes in sub-1V giga-integration era

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1 Author(s)
Yano, K. ; Hitachi Ltd.

Summary form only given. Conventional CMOS technology will face difficulties in the sub-0.1 μm, sub-1 V region. Random-modulation CMOS, which assigns multiple threshold levels in the same block through the use of sophisticated CAD tools, will emerge as a key technology in this new regime. Beginning with this first step, the era of "complex CMOS", which requires complicated design elaborations and operating control, is predicted to begin. This key change will open up opportunities for new methodologies and CAD tools. Another major change in trend will be the shift in System-on-Chip design methodology from being processor-centric to either memory-centric or communication-centric, depending on the application. In the former case, nanostructured memory technology will be a key innovation, which requires completely new design expertise, including quantum physics. In the latter case, real IP reuse is the key, which will be enabled by a new specification language, such as the Object Wrapper language. Our efforts to standardize this new language and its design methodology are also introduced

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Design Automation Conference, 2002. Proceedings of ASP-DAC 2002. 7th Asia and South Pacific and the 15th International Conference on VLSI Design. Proceedings.

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