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Browse Conference Publications > Junction Technology, 2001. IW ... Help

Characterization of the diode leakage current in advanced 0.12 /spl mu/m CMOS technology. (Does stress play a role?)

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3 Author(s)
Toren, W.-J. ; Philips Semicond., Crolles, France ; Perrin, E. ; Lunenborg, M.

Anomalous N+/Pwell diode leakage current in advanced 0.12 /spl mu/m CMOS technology is investigated. This current is tunnel enhanced, and geometry dependent. Doping level variations can explain this current behaviour, as well as other width scalable deviations like the mobility. Stress in STI is the most probable cause of these doping variations.

Published in:
Junction Technology, 2001. IWJT. Extended Abstracts of the Second International Workshop on

Date of Conference: 29-30 Nov. 2001

Page(s):
15 - 18
Meeting Date :
29 Nov 2001-30 Nov 2001
Print ISBN:
4-89114-019-4
INSPEC Accession Number:
7307752
Conference Location :
Tokyo, Japan
Digital Object Identifier :
10.1109/IWJT.2001.993817
Product Type:
Conference Publications

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