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Anomalous N+/Pwell diode leakage current in advanced 0.12 /spl mu/m CMOS technology is investigated. This current is tunnel enhanced, and geometry dependent. Doping level variations can explain this current behaviour, as well as other width scalable deviations like the mobility. Stress in STI is the most probable cause of these doping variations.
Date of Conference: 29-30 Nov. 2001