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An accurate photonic capacitance model for GaAs MESFETs

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7 Author(s)
C. Navarro ; Dept. of Commun. Eng., Cantabria Univ., Santander, Spain ; J. -M. Zamanillo ; A. M. Sanchez ; A. T. Puente
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A new set of pseudoempirical equations is presented in order to simulate the optical and bias dependencies of GaAs MESFET junction capacitances, which is valid for the whole I-V plane. The variations induced in the small-signal equivalent circuit by the optical illumination are extracted from on-wafer scattering parameter measurements. New linear and quasi-logarithmic variations versus the incident optical power are shown for gate-drain and gate-source (Cgd and Cgs) capacitances. Furthermore, experimental results are in very good agreement with the simulated values for a wide range of optical power and bias conditions. Large signal MESFET models show a better fit with measured S-parameters than those previously published, leading to a greater degree of confidence in the design of photonic monolithic microwave integrated circuits

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IEEE Transactions on Microwave Theory and Techniques  (Volume:50 ,  Issue: 4 )